JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD

JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD B.Tech I Year ELECTRONIC DEVICES AND CIRCUITS Previous Question Paper (September - 2023 - R22)

B.Tech | I Year | II Semester | R22 | September - 2023

Answer PaperPaper Code: 182AGMaximum Marks: 60Time: 3 Hours

Part-A is a compulsory question which consists of ten sub-questions from all units carrying equal marks. Part-B consists of ten questions (numbered from 2 to 11) carrying 10 marks each. From each unit, there are two questions and the student should answer one of them. Hence, the student should answer five questions from Part-B.

Part A

110 marks
a

What is diffusion length (L)?

1 marks

Answer

Diffusion length is the average distance a charge carrier (hole or electron) travels from the point of injection before it recombines with an opposite charge carrier.

b

Define Cut-in voltage. Give the cut-in voltage of Si and Ge diodes.

1 marks

Answer

Cut-in voltage (or threshold voltage) is the minimum forward bias voltage required across a diode to initiate significant current conduction. For Silicon (Si), it is approximately 0.7 V, and for Germanium (Ge), it is approximately 0.3 V.

c

Classify clipper circuits based on the connection of the active device. Mention their uses.

1 marks

Answer

Sign in to view the complete answer paper.

d

State Clamping Circuit Theorem.

1 marks

Answer

Sign in to view the complete answer paper.

e

Show that

(1/α) – (1/β) = 1
.

1 marks

Answer

Sign in to view the complete answer paper.

f

Mention different modes of operation of BJT.

1 marks

Answer

Sign in to view the complete answer paper.

g

Define pinch off voltage?

1 marks

Answer

Sign in to view the complete answer paper.

h

List the classification of FETs.

1 marks

Answer

Sign in to view the complete answer paper.

i

Draw the symbols of Schottky Diode and Photo diode.

1 marks

Answer

Sign in to view the complete answer paper.

j

List the applications of SCR.

1 marks

Answer

Sign in to view the complete answer paper.

Part B

210 marks
a

Explain the temperature dependence of VI characteristics of PN junction diode.

5 marks

Answer

Sign in to view the complete answer paper.

b

Explain break down mechanisms in semiconductor diodes.

5 marks

Answer

Sign in to view the complete answer paper.

OR
310 marks
a

In a typical n-type semiconductor, the Fermi level lies 0.5 eV below the conduction band at 300K. Find its new position when temperature in increased to 600K.

4 marks

Answer

Sign in to view the complete answer paper.

b

A Diode operating at 300 K at a forward voltage of 0.4V carries a current of 10 mA when voltage is changed to 0.42 V the current becomes thrice. Calculate the value of reverse leakage current and η for the diode (Assume VT = 26 mv).

6 marks

Answer

Sign in to view the complete answer paper.

410 marks
a

Explain half-wave rectifier and derive its ripple factor expression.

5 marks

Answer

Sign in to view the complete answer paper.

b

An AC supply of 230 V is applied to a half-wave rectifier circuit through transformer of turns ration 5:1. Assume the diode is an ideal one. The load resistance is 300 Ω. Find: i) DC output voltage ii) PIV iii) Maximum and average values of power delivered to the load.

5 marks

Answer

Sign in to view the complete answer paper.

OR
510 marks
a

Give the circuit of different types of shunt clippers and explain their operation with the help of their transfer characteristics.

5 marks

Answer

Sign in to view the complete answer paper.

b

Explain the principle of clamping and discuss the effect of source impedance, shunt resistance and cut in voltage.

5 marks

Answer

Sign in to view the complete answer paper.

610 marks
a

Compare the typical characteristics of CE, CB and CC configuration.

5 marks

Answer

Sign in to view the complete answer paper.

b

Calculate the values of IE, βdc and αdc for a transistor with IC=12.427µA, IB=200mA, ICBO=7µA. Also determine the new level of IC which will result from reducing IB to 150µA.

5 marks

Answer

Sign in to view the complete answer paper.

OR
710 marks
a

Explain the working of NPN and PNP transistor.

5 marks

Answer

Sign in to view the complete answer paper.

b

With necessary circuit and waveform, explain the switching characteristics of a transistor in detail.

5 marks

Answer

Sign in to view the complete answer paper.

810 marks
a

Explain the working of a P channel JFET and draw the VI characteristics of it.

5 marks

Answer

Sign in to view the complete answer paper.

b

Explain with the help of neat diagrams, the structure of an N-channel MOSFET and its Volt-ampere characteristics. In what ways it is different from a bipolar transistor.

5 marks

Answer

Sign in to view the complete answer paper.

OR
910 marks
a

Explain the performance of FET as a voltage variable resistor.

5 marks

Answer

Sign in to view the complete answer paper.

b

Define and explain the three parameters of a JFET give the relation between them.

5 marks

Answer

Sign in to view the complete answer paper.

1010 marks
a

Design and draw a Zener regulator circuit to meet the following specifications Load voltage= 8 V, Input Voltage =30V, Load Current = 0-50mA, Izmin = 5mA, Pz = 1Watts.

5 marks

Answer

Sign in to view the complete answer paper.

b

Explain Varactor Diode with its characteristics and list the applications.

5 marks

Answer

Sign in to view the complete answer paper.

OR
1110 marks
a

With neat energy band diagrams, explain the operation and characteristics of Tunnel Diode.

5 marks

Answer

Sign in to view the complete answer paper.

b

A Zener voltage Regulator circuit is to maintain constant voltage at 60 V, over a current range from 5 to 50 mA. The input supply voltage is 200V. Determine the value of resistance R to be connected in the circuit for voltage regulation from load current IL = 0 mA to IL max, the maximum possible value of IL. What is the value of ILmax?

5 marks

Answer

Sign in to view the complete answer paper.

About this paper

This page contains the solved question paper with answers of ELECTRONIC DEVICES AND CIRCUITS from JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD for B.Tech CE(SE) I Year II Semester, September - 2023, R22.

For the question paper without answers, switch to the Question Paper tab.

Other papers in ELECTRONIC DEVICES AND CIRCUITS

Loading Question Papers

Fetching data from database...