JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD

JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD B.Tech II Year ANALOG AND DIGITAL ELECTRONICS Previous Question Paper (August/September - 2022 - R18)

B.Tech | II Year | I Semester | R18 | August/September - 2022

Answer PaperPaper Code: 153ABMaximum Marks: 75Time: 3 Hours

Answer any five questions. All questions carry equal marks.

Main

115 marks
a

Analyze the differences between drift and diffusion capacitances in a semiconductor with neat diagrams.

7 marks

Answer

In a p-n junction, capacitance arises from the storage of charge. Drift capacitance, more commonly referred to as transition or depletion capacitance (CT), occurs under reverse bias. As reverse voltage increases, the depletion region widens, acting like a parallel plate capacitor where the depletion region is the dielectric and the ionized impurity atoms form the plates. It is defined as CT = dQ/dV, where Q is the charge of the ionized donors/acceptors.

Diffusion capacitance (CD) occurs under forward bias. When a diode is forward-biased, minority carriers are injected across the junction, creating a stored charge profile that decays with distance. As the forward voltage changes, the amount of stored charge changes, resulting in a capacitive effect. It is defined as CD = dQ/dV, where Q is the excess minority carrier charge. CD is typically much larger than CT because it is proportional to the forward current.

b

Explain the Zener and avalanche breakdown mechanisms of p-n junction diode in detail.

8 marks

Answer

Zener Breakdown occurs in heavily doped p-n junctions. Due to the high doping concentration, the depletion region is extremely narrow. When a strong reverse bias is applied, the electric field intensity across the junction becomes high enough (approx. 106 V/cm) to pull electrons directly out of the covalent bonds. This quantum mechanical tunneling effect creates a large number of free charge carriers, leading to a sharp increase in reverse current at a specific Zener voltage (VZ).

Avalanche Breakdown occurs in lightly or moderately doped junctions where the depletion region is wider. As reverse bias increases, minority carriers gain significant kinetic energy from the electric field. These high-energy carriers collide with atoms in the crystal lattice, breaking covalent bonds and creating new electron-hole pairs through a process called impact ionization. These newly created carriers are then accelerated by the field to cause further collisions, resulting in a cumulative, self-sustaining multiplication effect known as the avalanche effect, leading to a sudden, rapid increase in current.

215 marks
a

What is the photo diode? Explain its principle of operation and Applications in detail?

7 marks

Answer

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b

Explain clearly the DC and AC load line and also explain how to obtain quiescent point graphically for a transistor amplifier of CE configuration.

8 marks

Answer

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315 marks
a

Draw the small-signal model of common emitter BJT amplifier. Derive expressions for voltage gain, input resistance current gain and output resistance?

7 marks

Answer

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b

The h-parameters of a transistor used in a CE circuit are hie = 1.0 K, hre = 10×10-4, hfe = 50, hoe = 100 K. The load resistance for the transistor is 1 K in the collector circuit. Determine Ri, Ro, Av and Ai in the amplifier stage. (Assume Rs = 1000)

8 marks

Answer

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415 marks
a

Explain the construction and principle of operation of E-MOSFET along its characteristics.

7 marks

Answer

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b

Realize all the logic gates using NAND gate.

8 marks

Answer

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515 marks
a

Draw logic diagram of DTL NOR gate.

5 marks

Answer

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b

Simplify the Boolean function A'BCD' + A'BC'D + AB'C'D + ABCD' using K-map.

5 marks

Answer

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c

What are universal gates? Explain.

5 marks

Answer

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615 marks
a

Explain the TTL logic family with the help of example. And also write the characteristics of it.

7 marks

Answer

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b

Simplify the following function using Map method: F(A,B,C,D) = Σm(0,1,2,3,4,6,9,10) + d(7,11,12,13,15).

8 marks

Answer

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715 marks
a

Explain the Half adder? Implement the full adder using two half adders.

7 marks

Answer

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b

Explain the functions of multiplexers and decoders in digital logic design and draw the logic diagram of 4 to 1 line multiplexer.

8 marks

Answer

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815 marks
a

Draw the truth table of SR flip-flop and obtain its characteristics equation.

7 marks

Answer

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b

Explain race-around condition in relation to the J-K flip-flops using timing relationships. Draw the clocked Master-Slave J-K flip-flop configuration and explain how it removes race-around condition in J-K flip-flops?

8 marks

Answer

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About this paper

This page contains the solved question paper with answers of ANALOG AND DIGITAL ELECTRONICS from JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD for B.Tech CSE(IOT) II Year I Semester, August/September - 2022, R18.

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