Jawaharlal Nehru Technological University Hyderabad

Jawaharlal Nehru Technological University Hyderabad B.Tech II ANALOG AND DIGITAL ELECTRONICS Previous Question Paper (September - 2021 - R18)

B.Tech | II | I | R18 | September - 2021

Answer PaperPaper Code: 153ABMaximum Marks: 75Time: 3 hours

Answer any five questions. All questions carry equal marks.

Main

115 marks
a

Explain the characteristics and applications of a photodiode.

7 marks

Answer

A photodiode is a p-n junction device designed to operate in reverse bias, where it converts incident light energy into electrical current. When photons with energy greater than the semiconductor bandgap strike the depletion region, they generate electron-hole pairs, increasing the reverse leakage current proportional to the light intensity.

Key characteristics include:

  • Sensitivity: High sensitivity to light, allowing it to detect low-intensity signals.
  • Linearity: The output current is directly proportional to the incident light intensity over a wide range.
  • Response Time: Very fast response time, making it suitable for high-frequency applications.
  • Dark Current: A small current flows even in the absence of light due to thermal generation.

Applications include optical communication systems, light intensity measurement, smoke detectors, and medical imaging equipment.

b

How does the reverse saturation current of a diode varies with temperature? Explain.

8 marks

Answer

The reverse saturation current (I₀) of a diode is highly sensitive to temperature variations. It arises due to the thermal generation of minority charge carriers within the semiconductor material. As temperature increases, the number of thermally generated electron-hole pairs increases exponentially.

The relationship is governed by the following approximation:

I₀(T₂) = I₀(T₁) × 2^((T₂ - T₁)/10)

This formula indicates that for silicon diodes, the reverse saturation current approximately doubles for every 10°C rise in temperature. The physical reasoning is that higher thermal energy provides sufficient kinetic energy for electrons to break covalent bonds, crossing the forbidden energy gap from the valence band to the conduction band. Consequently, the concentration of minority carriers increases, leading to a significant rise in the reverse leakage current. This temperature dependence is a critical factor in circuit design, as it can lead to thermal instability or thermal runaway in power semiconductor devices if not properly managed with heat sinks or temperature compensation circuits.

215 marks
a

Draw a circuit diagram of series inductor filter with half wave rectifier. Explain with input and output waveforms.

8 marks

Answer

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b

Explain negative peak clipper with and without reference voltage.

7 marks

Answer

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315 marks
a

Explain self bias. Derive the expression for S? Why it is widely used.

7 marks

Answer

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b

Prove that the transistor acts as an amplifier with suitable circuit diagram.

8 marks

Answer

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4

Derive the expression for AVS, AIS, Ri, Ro of transistor amplifier using CB configuration.

15 marks

Answer

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515 marks
a

Explain the operation and characteristics of N- channel JFET.

8 marks

Answer

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b

Discuss any two applications of FET.

7 marks

Answer

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615 marks
a

Explain about Transistor–Transistor logic. Also mention the types of output configuration.

8 marks

Answer

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b

Prove that AND-OR network is equivalent to NAND-NAND network.

7 marks

Answer

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715 marks
a

Give the simplest logic circuit for following logic equation where d represents don’t care conditions.

F(A,B,C,D) = Σm(7) + d(10, 11, 12, 13, 14, 15).
9 marks

Answer

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b

Design a 32:1 multiplexer using 16:1 Mux and 2:1 multiplexer?

6 marks

Answer

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815 marks
a

Explain 4 bit parallel in serial out shift register.

8 marks

Answer

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b

Explain about RAM with neat sketches.

7 marks

Answer

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About this paper

This page contains the question paper of ANALOG AND DIGITAL ELECTRONICS from Jawaharlal Nehru Technological University Hyderabad for B.Tech CSE II I, September - 2021, R18.

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