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JNTU B.Tech I Year ENGINEERING PHYSICS Previous Question Paper (May - 2018 - R15)

B.Tech | I Year | I-I | R15 | May - 2018

Answer PaperPaper Code: 121ADMaximum Marks: 75Time: 3 hours

Note: This question paper contains two parts A and B. Part A is compulsory which carries 25 marks. Answer all questions in Part A. Part B consists of 5 Units. Answer any one full question from each unit. Each question carries 10 marks and may have a, b, c as sub questions.

PART-A

125 marks
a

Define Coordination number and Packing factor.

2 marks

Answer

The Coordination number is the number of nearest neighboring atoms touching a specific atom in a crystal lattice. The Packing factor (or Atomic Packing Factor) is the ratio of the volume occupied by atoms in a unit cell to the total volume of the unit cell.

b

Sketch the (100), (110) and (111) planes in a simple Cubic structure.

3 marks

Answer

In a simple cubic structure: The (100) plane is a face parallel to the yz-plane passing through the origin. The (110) plane is a diagonal plane passing through the z-axis and the face diagonal of the xy-plane. The (111) plane is an inclined plane intersecting all three axes at unit distance from the origin.

c

Define Fermi Energy.

2 marks

Answer

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d

State the Bloch theorem.

3 marks

Answer

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e

Define the Dielectric constant of a material.

2 marks

Answer

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f

Explain the nature of superconductor in the magnetic field.

3 marks

Answer

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g

What is diffraction grating?

2 marks

Answer

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h

An optical fiber having refractive indices of 1.6 and 1.59 for core and cladding respectively is placed in water of refractive index 1.33. Find the Numerical Aperture of the fiber.

3 marks

Answer

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i

Write is the significance of Surface to Volume ratio in nanomaterials.

2 marks

Answer

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j

A hall with volume 6000 m3 has reverberation time 1.2 sec. Find the total absorption in the hall.

3 marks

Answer

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PART-B

210 marks
a

Distinguish between Ionic, Covalent and Metallic bonds in solids.

5 marks

Answer

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b

Obtain the expression for the inter planar spacing of the orthogonal crystal system.

5 marks

Answer

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OR
310 marks
a

Describe the crystal structure of diamond.

4 marks

Answer

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b

State the Bragg’s law of X-ray diffraction. Discuss the Laue method of X-ray diffraction for the determination of crystal structure.

6 marks

Answer

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410 marks
a

What are Matter waves? How they are different from electromagnetic waves.

3 marks

Answer

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b

Formulate Schroedinger’s Time Independent wave equations for a particle in one dimensional infinite square well potential and obtain the expression for its energy values.

7 marks

Answer

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OR
510 marks
a

Distinguish between Maxwell – Boltzmann, Bose Einstein and Fermi – Dirac distributions.

6 marks

Answer

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b

Draw E-K curves for an electron in periodic potential and explain how it leads to formation of energy bands in solids.

4 marks

Answer

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610 marks
a

What is density of polarization? Obtain a relation between polarization density and electric displacement vector.

3 marks

Answer

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b

Define electronic polarization. Derive an expression for electronic polarizability.

7 marks

Answer

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OR
710 marks
a

Distinguish between dia, para, ferro, antiferro and ferri magnetic materials.

5 marks

Answer

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b

Write two applications of ferrimagnetic materials.

2 marks

Answer

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c

What are type I and type II super conductors.

3 marks

Answer

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810 marks
a

Explain the phenomenon of interference in reflected light from a thin film. Obtain the condition for maxima and minima.

8 marks

Answer

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b

How this phenomenon is used to reduce the heating effect of sun light from the roof of a building.

2 marks

Answer

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OR
910 marks
a

Write down the characteristics of Laser light.

2 marks

Answer

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b

Describe the construction and working of He-Ne laser with suitable diagrams.

8 marks

Answer

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1010 marks
a

What are direct and indirect band gap semiconductors?

3 marks

Answer

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b

State and explain the Hall-effect and derive the expression for Hall coefficient.

5 marks

Answer

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c

The Hall coefficient of specimen is 3.66×10-4 m3/coul. Find the number of charge carriers present per unit volume of the specimen.

2 marks

Answer

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OR
1110 marks
a

Derive an expression for the concentration of electrons in an intrinsic semiconductor.

5 marks

Answer

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b

Describe the Sol-Gel method of preparation of Nanomaterials.

5 marks

Answer

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This page contains the solved question paper with answers of ENGINEERING PHYSICS from JNTU for B.Tech ECE I Year I-I, May - 2018, R15.

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