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JNTU B.Tech II ANALOG AND DIGITAL ELECTRONICS Previous Question Paper (August/September - 2022 - R18)

B.Tech | II | II-I | R18 | August/September - 2022

Answer PaperPaper Code: 153ABMaximum Marks: 75Time: 3 Hours

Answer any five questions. All questions carry equal marks.

Main

115 marks
a

Discuss the different types of junction breakdowns that can occur in a reverse biased diode.

8 marks

Answer

When a p-n junction diode is reverse biased, two primary breakdown mechanisms can occur as the voltage increases:

  1. Zener Breakdown: This occurs in heavily doped diodes with narrow depletion regions. Due to the high doping concentration, the electric field across the depletion layer becomes extremely strong even at low reverse voltages. This intense field exerts a force on the valence electrons, pulling them directly out of their covalent bonds (field emission), leading to a sudden increase in current. This process is temperature-dependent, where the breakdown voltage decreases as temperature increases.
  2. Avalanche Breakdown: This occurs in lightly doped diodes with wider depletion regions. As reverse voltage increases, thermally generated minority carriers gain sufficient kinetic energy from the electric field to collide with crystal atoms, knocking out additional valence electrons (impact ionization). These new carriers gain energy and cause further collisions, creating a cumulative multiplication effect known as an avalanche. This process is temperature-dependent, where the breakdown voltage increases as temperature increases.
b

Explain operation of diode in forward bias and reverse bias condition. Draw V-I characteristics of diode.

7 marks

Answer

A p-n junction diode operates differently based on the applied bias polarity:

  1. Forward Bias: The positive terminal of the battery is connected to the p-type and the negative to the n-type. This reduces the potential barrier, allowing majority carriers (holes in p, electrons in n) to cross the junction. Current flows easily, increasing exponentially with voltage.
  2. Reverse Bias: The positive terminal is connected to the n-type and the negative to the p-type. This increases the potential barrier and widens the depletion region. Only a negligible reverse saturation current flows due to minority carriers.

The V-I characteristics show an exponential rise in current in the forward bias region (first quadrant) and a near-zero current in the reverse bias region (third quadrant) until the breakdown voltage is reached, where current increases sharply.

V-I Characteristics: Forward region (V > 0, I increases exponentially); Reverse region (V < 0, I ≈ 0 until V = V_breakdown)
215 marks
a

Explain about the full-wave center-tap rectifier with L section filters and also draw suitable diagram and waveforms.

8 marks

Answer

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b

Write a short note on diffusion capacitance and diode switching times.

7 marks

Answer

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315 marks
a

With neat diagrams and necessary equations, explain the effect of coupling capacitor and bypass capacitor on the performance of an amplifier at low-frequencies?

8 marks

Answer

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b

Explain how self-biasing can be done in a BJT with relevant sketches and waveforms?

7 marks

Answer

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415 marks
a

Write equations of voltage gain, current gain, Input impedance and Output impedance of CE amplifier.

10 marks

Answer

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b

Explain how transistor acts as an amplifier?

5 marks

Answer

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515 marks
a

Bring out the differences between BJT and FET. Compare the three configurations of JFET amplifiers.

8 marks

Answer

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b

With the help of a neat schematic, explain the functioning of a common drain amplifier.

7 marks

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615 marks
a

Define the De Morgan Laws with suitable example.

6 marks

Answer

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b

Implement the basic logic gates by using modified DTL gates, HTL and TTL gates.

9 marks

Answer

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715 marks
a

Explain the function of a Encoder with necessary diagrams and discuss its applications.

6 marks

Answer

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b

Design the 4-bit binary Adder-Subtractor with suitable diagram.

9 marks

Answer

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815 marks
a

Give the design of 3 bit Ring counter and explain its operation with waveforms. Also give the applications of ring counter.

9 marks

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b

Obtain the characteristic equations of D and T flip flops.

6 marks

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