JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD

JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD B.Tech II ELECTRONIC DEVICES AND CIRCUITS Previous Question Paper (April/May - 2018 - R13)

B.Tech | II | I | R13 | April/May - 2018

Answer PaperPaper Code: 113AUMaximum Marks: 75Time: 3 Hours

Note: This question paper contains two parts A and B. Part A is compulsory which carries 25 marks. Answer all questions in Part A. Part B consists of 5 Units. Answer any one full question from each unit. Each question carries 10 marks and may have a, b, c as sub questions.

Part A

125 marks
a
Define static resistance.
2 marks

Answer

Static resistance, also known as DC resistance, is defined as the ratio of the DC voltage across a diode to the DC current flowing through it at a specific operating point on its V-I characteristics curve. It is expressed as Rdc = V/I.

b
Write the effect of temperature on diode characteristics.
3 marks

Answer

As temperature increases, the reverse saturation current (Io) of a diode increases significantly, approximately doubling for every 10°C rise in silicon. This causes the V-I characteristic curve to shift to the left, reducing the forward voltage drop required for a specific current by about 2 mV/°C.

c
What is regulation?
2 marks

Answer

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d
List the differences between different filters.
3 marks

Answer

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e
Define current amplification factor.
2 marks

Answer

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f
What is emitter follower? Draw the circuit diagram of CC configuration.
3 marks

Answer

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g
What is the need of biasing?
2 marks

Answer

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h
Explain, how to avoid thermal runway?
3 marks

Answer

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i
Mention the applications of FET.
2 marks

Answer

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j
Why the input impedance of FET is higher than BJT?
3 marks

Answer

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Part B

210 marks
a
Draw and explain V-I characteristics of PN diode.
5 marks

Answer

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b
With suitable expressions explain transition capacitance.
5 marks

Answer

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OR
310 marks
a
Describe the principle of operation of tunnel diode.
5 marks

Answer

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b
Explain the working of semiconductor photo diode.
5 marks

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410 marks
a
Derive the equation for ripple factor of half wave rectifier with C-filter.
5 marks

Answer

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b
With suitable wave forms explain bridge rectifier.
5 marks

Answer

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OR
510 marks
a
Describe the operation of full wave rectifier with π-section filter.
5 marks

Answer

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b
A 50 Hz transformer having 60 V r. m. s. on each side of the centre tap supplies a full wave rectifier circuit. The circuit load is 210 Ω with a shunt capacitor filter of 1000 µF. Find the ripple factor.
5 marks

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610 marks
a
Explain the working of PNP transistor.
5 marks

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b
Write the differences between CB, CE, and CC Amplifier Configurations.
5 marks

Answer

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OR
710 marks
a
Derive the relation between α and β.
4 marks

Answer

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b
Discuss, how the h-parameters are determined from transistor Characteristics.
6 marks

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810 marks
a
Derive the equation for stability factor for fixed bias.
5 marks

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b
Draw and explain the circuit for bias compensation using diode.
5 marks

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OR
910 marks
a
Write a short note on Stabilization against variations in VBE and β.
5 marks

Answer

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b
For the transistor amplifier circuit, when signal changes by 0.012 V, the base current changes by 9 µA and collector current by 1.3 mA. If the collector load RC = 6 KΩ, RL = 12 KΩ. Determine input resistance, current gain and voltage gain.
5 marks

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1010 marks
a
Write short notes on Small Signal Model of JFET.
5 marks

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b
Draw and explain drain and transfer characteristics of depletion type MOSFET.
5 marks

Answer

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OR
1110 marks
a
With neat sketch, discuss about common source FET amplifier.
6 marks

Answer

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b
Explain, how FET is working as Voltage Variable Resistor?
4 marks

Answer

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About this paper

This page contains the question paper of ELECTRONIC DEVICES AND CIRCUITS from JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD for B.Tech MECT-MCT-MEM II I, April/May - 2018, R13.

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