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JNTU B.Tech II ELECTRONIC DEVICES AND CIRCUITS Previous Question Paper (February - 2024 - R15)

B.Tech | II | II-I | R15 | February - 2024

Answer PaperPaper Code: 123AUMaximum Marks: 75Time: 3 Hours

Note: i) Question paper consists of Part A, Part B. ii) Part A is compulsory, which carries 25 marks. In Part A, answer all questions. iii) In Part B, Answer any one question from each unit. Each question carries 10 marks and may have a, b as sub questions.

Part A

125 marks
a
Explain the difference between ideal operation and practical operation of the P-N junction diode using I-V Characteristics.
2 marks

Answer

An ideal diode acts as a perfect switch: zero resistance in forward bias and infinite resistance in reverse bias, with a sharp transition at zero voltage. A practical diode exhibits a threshold voltage (cut-in voltage) of approximately 0.7V for Silicon, has finite forward resistance, and shows a small reverse saturation current due to minority carriers before reaching the breakdown region.

b
Illustrate the V-I characteristics of Tunnel diode.
3 marks

Answer

The V-I characteristic of a tunnel diode is non-monotonic, showing a region of negative differential resistance. As forward voltage increases, current rises to a peak point, then decreases to a valley point due to quantum mechanical tunneling, and finally increases again following standard diode behavior.

c
What do you understand by the term “Rectifier”? What is the need of Rectifier in the circuit operation?
2 marks

Answer

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d
What is the voltage breakdown phenomenon of the diode? Tell how the supply can be regulated?
3 marks

Answer

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e
Show the schematic of the n-p-n Transistor. What do you understand by Uni-polar and Bi-polar Transistor.
2 marks

Answer

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f
Compare the gains of the CB, CE and CC amplifier. Show the relationship between the gains of different amplifier configurations.
3 marks

Answer

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g
Interpret the DC load line and AC load line, to define the operating point of the transistor.
2 marks

Answer

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h
Compare the fixed bias and voltage divider bias in terms of various input output Parameters.
3 marks

Answer

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i
Illustrate the pinch-off process in the field effect transistor.
2 marks

Answer

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j
Compare FET and BJT.
3 marks

Answer

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Part B

210 marks
a
Analyze the operation of P-N junction diode with no applied voltage or open circuit condition with suitable diagram distribution of voltage, charge and electric field.
5 marks

Answer

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b
Solve for new nominal zener potential at 100℃, if zener breakdown voltage (Vz) is 10V, and the temperature coefficient is 0.0072V.
5 marks

Answer

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OR
310 marks
a
Analyze the operation of P-N junction diode with forward bias condition with suitable diagram distribution of voltage, charge and electric field.
5 marks

Answer

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b
Justify that the forward current of the p-n junction diode is dependent on reverse Saturation current and temperature.
5 marks

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410 marks
a
Give the Analysis of full wave rectifier with the help of circuit diagram and input-output waveforms.
5 marks

Answer

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b
Prove that the ripple factor of half wave rectifier is higher than that of full wave rectifier.
5 marks

Answer

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OR
510 marks
a
Prove that the maximum efficiency of the full wave rectifier is 81.2%.
5 marks

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b
Construct the Bridge rectifier circuit using diodes and explain the working for both positive and negative half cycle.
5 marks

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610 marks
a
Examine the operation of the transistor as an amplifier. Also show the operating region, in which the transistor is used as an amplifier.
5 marks

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b
Explain the Small signal low frequency transistor model of BJT.
5 marks

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OR
710 marks
a
Discuss the three different operating regions of the transistor on the input output characteristic graph and also show the difference between them.
5 marks

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b
Explain a transistor amplifier using h-parameter model.
5 marks

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810 marks
a
Elaborate the need of Transistor biasing with the help of characteristic curve.
4 marks

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b
Discuss the “stability” of the transistor. Derive the equation for stability factor of the transistor.
6 marks

Answer

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OR
910 marks
a
Analyze the operation of Emitter feedback bias circuit with the help of circuit diagram. Also give the merits and demerits of Emitter feedback bias circuit.
5 marks

Answer

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b
Analyze the operation of Collector feedback bias circuit with the help of circuit diagram. Also give the merits and demerits of Collector feedback bias circuit.
5 marks

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1010 marks
a
Apply the voltage Vds in FET and keep the Vgs constant. Explain the working of the FET for the above said condition.
5 marks

Answer

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b
Utilize the Drain characteristics of n-channel JFET and explain the pinch-off region and breakdown region in n-Channel JFET.
5 marks

Answer

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OR
1110 marks
a
Classify the MOSFET in terms of the channels between source and drain. Also explain why it is called as voltage-controlled capacitor.
5 marks

Answer

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b
Distinguish between the depletion type and enhancement type p-channel MOSFET with the help of construction and I-V characteristics.
5 marks

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About this paper

This page contains the question paper of ELECTRONIC DEVICES AND CIRCUITS from JNTU for B.Tech MECT-MCT-MEM II II-I, February - 2024, R15.

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