JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD

JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD B.Tech I Year BASIC ELECTRICAL AND ELECTRONICS ENGINEERING Previous Question Paper (April - 2018 - R16)

B.Tech | I Year | I-II | R16 | April - 2018

Answer PaperPaper Code: 132AJMaximum Marks: 75Time: 3 hours

Note: This question paper contains two parts A and B. Part A is compulsory which carries 25 marks. Answer all questions in Part A. Part B consists of 5 Units. Answer any one full question from each unit. Each question carries 10 marks and may have a, b, c as sub questions.

PART-A

125 marks
a

Distinguish between ideal and practical voltage source?

2 marks

Answer

An ideal voltage source maintains a constant terminal voltage regardless of the current drawn, having zero internal resistance. A practical voltage source has a small internal resistance in series, causing the terminal voltage to decrease as the load current increases due to the internal voltage drop.

b

State Ohm’s law and give an example.

3 marks

Answer

Ohm's law states that the current flowing through a conductor between two points is directly proportional to the voltage across the two points, provided the temperature remains constant. It is expressed as:

V = I × R

For example, if a 10 V source is connected to a 5 Ω resistor, the current is I = 10 V / 5 Ω = 2 A.

c

What is resonance in electric circuits?

2 marks

Answer

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d

State the Maximum Power Transfer theorem.

3 marks

Answer

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e

Draw the equivalent circuit of an ideal diode and that of a piecewise linear model of it.

2 marks

Answer

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f

Show the current paths in a full wave bridge rectifier for a sinusoidal input during positive and negative half cycles.

3 marks

Answer

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g

Define operating point of a BJT. List the parameters against the variations of which the operating point needs to be stabilized.

2 marks

Answer

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h

Define hfe and hoe of a BJT in CE configuration. Mention their units.

3 marks

Answer

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i

What is pinch-off voltage for a JFET?

2 marks

Answer

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j

Draw the symbols of p-channel JFET, NPN-BJT, tunnel diode and varactor diode.

3 marks

Answer

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PART-B

210 marks
a

Making use of star/delta transformation, determine the resistance between terminals A and B as shown in figure 1.

5 marks

Answer

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b

Derive the expression for the RMS, average values, peak factor and form factor of sinusoidal signal.

5 marks

Answer

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OR
310 marks
a

An inductance of 0.5H, a resistance of 5 ohms, and a capacitance of 8 μF are in series across a 220V, 50Hz AC supply. Find the voltage across each element and total current supplied by the supply and draw the phasor diagram for the circuit.

5 marks

Answer

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b

In the following circuit shown in figure 2, the effective voltage between points A and B is 25 volts. Find the corresponding effective values of V and IT.

5 marks

Answer

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410 marks
a

Explain the procedure to draw the locus diagram of R-L series circuit, when L is varying.

5 marks

Answer

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b

Apply super position theorem to the network shown in figure 3 and obtain current impedance.

5 marks

Answer

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OR
510 marks
a

Derive the expression for resonant frequency, half power frequencies of series RLC circuit.

5 marks

Answer

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b

Find the resonant frequency of the following circuit shown in figure 4.

5 marks

Answer

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610 marks
a

Differentiate between: i) Static and dynamic resistances of a diode. ii) Transition and diffusion capacitances of a diode.

5 marks

Answer

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b

Define Rectification efficiency of rectifier. Derive expression to show that it is 81% for a Full wave rectifier.

5 marks

Answer

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OR
710 marks
a

Explain how current flows in a diode under forward biased and reverse biased conditions.

5 marks

Answer

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b

Compare the performance of: i) Centre tapped transformer type and bridge type full wave rectifiers. ii) Capacitor and π-section filters.

5 marks

Answer

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810 marks
a

Derive an expression for the stability factor S of a BJT with voltage divider bias.

5 marks

Answer

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b

Draw the h-parameter equivalent circuit of a BJT in CE configuration.

5 marks

Answer

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OR
910 marks
a

For the voltage divider biased BJT shown below in figure 5, determine the operating point. Assume β to be 50 for the transistor.

5 marks

Answer

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b

Compare the characteristics of CE, CB and CC configurations of a BJT.

5 marks

Answer

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1010 marks
a

Compare BJT and JFET in all aspects.

5 marks

Answer

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b

With the help of relevant energy band diagram explain tunnelling phenomenon in a Tunnel diode.

5 marks

Answer

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OR
1110 marks
a

Draw the characteristics of an n-channel JFET in Common source configuration. Show pinch-off region on the curves.

5 marks

Answer

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b

How and under what conditions Zener breakdown take place in a diode? Draw the V-I characteristics of Zener diode and show the breakdown region.

5 marks

Answer

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About this paper

This page contains the solved question paper with answers of BASIC ELECTRICAL AND ELECTRONICS ENGINEERING from JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD for B.Tech PTM I Year I-II, April - 2018, R16.

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