JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD

Pre-requisites

Nil.

Course Objectives

This is a fundamental course, basic knowledge of which is required by

all the circuit branch engineers. This course focuses:

• To familiarize the student with the principle of operation, analysis and design of Junction diode, BJT and FET amplifier circuits, transistors and field effect transistors.
• To understand diode as rectifier.
• To study basic principle of filter circuits and various types.

Course Outcomes

At the end of the course, the student will be able to:

• Understand and Analyse the different types of diodes, operation and its characteristics
• Design and analyse the DC bias circuitry of BJT and FET
• Design biasing circuits using diodes and transistors.
• To analyze and design diode application circuits, amplifier circuits and oscillators employing BJT, FET devices.

UNIT - I

P-N Junction Diode: Qualitative Theory of P-N Junction, P-N Junction as a Diode, Diode Equation, Volt-Ampere Characteristics, Temperature dependence of VI characteristic, Ideal versus Practical – Resistance levels (Static and Dynamic), Transition and Diffusion Capacitances, Diode Equivalent Circuits, Load Line Analysis, Breakdown Mechanisms in Semiconductor Diodes, Zener Diode Characteristics. Special Purpose Electronic Devices: Principle of Operation and Characteristics of Tunnel Diode (with the help of Energy Band Diagram), Varactor Diode, SCR and Semiconductor Photo Diode.

UNIT - II

Rectifiers and Filters: The P-N junction as a Rectifier, Half wave Rectifier, Full wave Rectifier, Bridge Rectifier, Harmonic components in a Rectifier Circuit, Inductor Filters, Capacitor Filters, L- Section Filters, π- Section Filters, Comparison of Filters, Voltage Regulation using Zener Diode.

UNIT - III

Bipolar Junction Transistor and UJT: The Junction Transistor, Transistor Current Components, Transistor as an Amplifier, Transistor Construction, BJT Operation, BJT Symbol, Common Base, Common Emitter and Common Collector Configurations, Limits of Operation , BJT Specifications, BJT Hybrid Model, Determination of h-parameters from

Transistor Characteristics, Comparison of CB, CE, and CC Amplifier Configurations, UJT and Characteristics.

UNIT - IV

Transistor Biasing and Stabilization: Operating Point, The DC and AC Load lines, Need for Biasing, Fixed Bias, Collector Feedback Bias, Emitter Feedback Bias, Collector - Emitter Feedback Bias, Voltage Divider Bias, Bias Stability, Stabilization Factors, Stabilization against variations in VBE and β, Bias Compensation using Diodes and Transistors, Thermal Runaway, Thermal Stability, Analysis of a Transistor Amplifier Circuit using h-Parameters.

UNIT - V

Field Effect Transistor: The Junction Field Effect Transistor (Construction, principle of operation, symbol) – Pinch-off Voltage - Volt-Ampere characteristics, The JFET Small Signal Model, MOSFET (Construction, principle of operation, symbol), MOSFET Characteristics in Enhancement and Depletion modes.

TEXT BOOKS:

• 1. Millman’s Electronic Devices and Circuits – J. Millman, C. C. Halkias, and Satyabrata Jit, 2 Ed., 1998, TMH.
• 2. Electronic Devices and Circuits – David A. Bell, 5 Ed, Oxford
• 3. Electronic Devices and Circuits – Mohammad Rashid, Cengage Learning, 2013

REFERENCE BOOKS:

• 1. Integrated Electronics – J. Millman and Christos C. Halkias, 1991 Ed., 2008, TMH.
• 2. Electronic Devices and Circuits – R.L. Boylestad and Louis Nashelsky, 9 Ed., 2006, PEI/PHI.
• 3. Electronic Devices and Circuits – B. P. Singh, Rekha Singh, Pearson, 2 Edn, 2013.
• 4. Electronic Devices and Circuits – Anil K. Maini, Varsha Agarwal, 1Ed, 2009, Wiley India Pvt. Ltd.