B.Tech IV Year II Semester (R18)
VLSI Design
Upon completing this course, the student will be able to
Fundamentals: Need for Low Power Circuit Design, Sources of Power Dissipation – Switching Power Dissipation, Short Circuit Power Dissipation, Leakage Power Dissipation, Glitching Power Dissipation, Short Channel Effects –Drain Induced Barrier Lowering and Punch Through, Surface Scattering, Velocity Saturation, Impact Ionization, Hot Electron Effect.
Low-Power Design Approaches: Low-Power Design through Voltage Scaling – VTCMOS circuits, MTCMOS circuits, Architectural Level Approach –Pipelining and Parallel Processing Approaches. Switched Capacitance Minimization Approaches: System Level Measures, Circuit Level Measures, and Mask level Measures.
Low-Voltage Low-Power Adders: Introduction, Standard Adder Cells, CMOS Adder’s Architectures – Ripple Carry Adders, Carry Look- Ahead Adders, Carry Select Adders, Carry Save Adders, Low- Voltage Low-Power Design Techniques –Trends of Technology and Power Supply Voltage, Low- Voltage Low-Power Logic Styles.
Low-Voltage Low-Power Multipliers: Introduction, Overview of Multiplication, Types of Multiplier Architectures, Braun Multiplier, Baugh- Wooley Multiplier, Booth Multiplier, Introduction to Wallace Tree Multiplier.
Low-Voltage Low-Power Memories: Basics of ROM, Low-Power ROM Technology, Future Trend and Development of ROMs, Basics of SRAM, Memory Cell, Precharge and Equalization Circuit, Low-Power SRAM Technologies, Basics of DRAM, Self-Refresh Circuit, Future Trend and Development of DRAM.
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