JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD

UNIT - I

Varactor Diode: Equivalent circuit, static and dynamic figures of merit Manley Rowe power relation, parametric amplifiers, up converter, Degeneration amplifiers, Varactor multipliers, Charge storage capacitance.

UNIT - II

Tunnel Diode: Equivalent circuit, Tunnel diode stability, Tunnel diode amplifiers, Gunn devices: Volt amp. Characteristics, Small signal, Nonlinear, large signal theory, Modes of operation of Gunn diode, Gunn amplifiers-Gunn oscillators, Avalanche transit time MW diodes. Small signal theory, Large signal operation, Noise.

UNIT - III

PIN Diodes: Description, the I-layer, Equivalent circuit behavior under reverse bias and forward bias, Diode impedance, Materials, Applications.

UNIT - IV

Schottky Barrier Diode: Physics of Schottky barriers, Design of and performance of Schottky barrier diode applications, IMPATT & TRAPATT diodes: Principles and applications as amplifiers and oscillators.

UNIT - V

Microwave Transistor: Wafer design. Equivalent circuit, Design compromises, Package design.

TEXT BOOKS:

• 1. Watson, “Microwave Semiconductor Devices and their applications”, McGraw Hill, 1969. rd
• 2. Sze. S.M, and Kwok K. Ng, “Physics of Semiconductor Devices”, John Wiley, 3 Edition 2007.

REFERENCE:

• 1. Shurmer, H.V, “Microwave Semiconductors”, Wien Oldenbourg, 1971. M. TECH. – I YEAR – II SEMESTER MICROWAVE AND RADAR ENGINEERING