M.Tech I Year I Semester (R17)
Review of Microelectronics and Introduction to MOS Technologies: MOS, CMOS, BiCMOS Technology. Basic Electrical Properties of MOS, CMOS & BiCMOS Circuits: Ids – Vds relationships, Threshold Voltage VT, Gm, Gds and ωo, Pass Transistor, MOS, CMOS & Bi CMOS Inverters, Zpu/Zpd, MOS Transistor circuit model, Latch-up in CMOS circuits.
Layout Design and Tools: Transistor structures, Wires and Vias, Scalable Design rules, Layout Design tools. Logic Gates & Layouts: Static Complementary Gates, Switch Logic, Alternative Gate circuits, Low power gates, Resistive and Inductive interconnect delays.
Overview of semiconductor industry, Stages of Manufacturing, Process and product trends, Crystal growth, Basic wafer fabrication operations, process yields, Semiconductor material preparation, Basic wafer fabrication operations, Yield measurement, Contamination sources, Clean room construction, Oxidation and Photolithography, Doping and Depositions, Metallization.Ten step patterning process, Photoresists, physical properties of photoresists, Storage and control of photoresists, photo masking process, Hard bake, develop inspect, Dry etching Wet etching, resist stripping
Doping and depositions: Diffusion process steps, deposition, Drive-in oxidation, Ion implantation-1, Ion implantation-2, CVD basics, CVD process steps, Low pressure CVD systems, Plasma enhanced CVD systems, Vapour phase epitoxy, molecular beam epitaxy.
Design rules and Scaling, BICMOS ICs: Choice of transistor types, pnp transistors, Resistors, capacitors, Packaging: Chip characteristics, package functions, package operations
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