JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD

Prerequisite

Power Electronics

Cousre Objectives: to prepare the students to

• improve power semiconductor device structures for adjustable speed motor control applications.
• understand the static and dynamic characteristics of current controlled power semiconductor devices
• understand the static and dynamic characteristics of voltage controlled power semiconductor devices
• enable the students for the selection of devices for different power electronics applications
• understand the control and firing circuit for different devices.

Course Outcomes

Upon completion of this course, students should be able to

• Know the operating charectertics of various basic semiconductor devices and switches
• Understand the advanced power semiconductor devices operation.
• Know the modeling of basic and advanced semiconductor devices and switches through simulation
• Analyze the applications of various power semiconductor switches

UNIT - I

POWER DIODES: Basic structure and V-I characteristics, breakdown voltages and control, on-state losses, switching characteristics-turn-on transient, turn off transient and reverse recovery transient, Schottky diodes, snubber requirements for diodes, diode snubber, modelling and simulation of Power diodes. 5 Hrs. Power BJT’S: Basic structure and V-I characteristics, breakdown voltages and control, secondary breakdown and it’s control- FBSOA and RBSOA curves - on state losses, switching characteristics, resistive switching specifications, clamped inductive switching specifications, turnon transient, turn-off transient, storage time, base drive requirements, switching losses.

UNIT - II

POWER BJT’S: Device protection- snubber requirements for BJT’S and snubber design switching aids,modeling and simulation of power BJT’S. SILICON CONTROLLED RECTIFIERS (THYRISTORS): Basic structure, V-I characteristics, turn-on process, on-state operation, turn -off process, switching characteristics, turn-on transient and di/dt limitations, turn-off transient, turnoff time and reapplied dv/dt limitations,gate drive requirements, ratings of thyristors,snubber requirements and snubber design, modelling and simulation of Thyristor. TRIACS: Basic structure and operation-I characteristics, ratings, snubber requirements, modelling and simulation of triacs.

UNIT - III

GATE TURNOFF THYRISTOR (GTO): Basic structure and operation, GTO switching characteristics, GTO turn-on transient, GTO turn -off transient, minimum on and off state times, gate drive requirements, maximum controllable anode current, over current protection of GTO’S, modelling and simulation of GTO’S. POWER MOSFET’S: Basic structure, V-I characteristics, turn-on process, on state operation, turnoff process, switching characteristics, resistive switching specifications, clamped inductive switching specifications - turn-on transient and di/dt limitations, turn-off transient, turn off time, switching losses, effect of reverse recovery transients on switching stresses and losses - dv/dt limitations, gating

R19 M.TECH M. TECH. PE/PEED

requirements, gate charge - ratings of MOSFET’S, FBSOA and RBSOA curves, device protection - snubber requirements, modeling and simulation of Power MOSFET’S.

UNIT - IV

INSULATED GATE BIPOLAR TRANSISTORS (IGBT’S): Basic structure and operation, latch up IGBT, switching characteristics, resistive switching specifications, clamped inductive switching specification – IGBT turn-on transient, IGBT turn off transient- current tailing - gating requirements ,ratings of IGBT’S, FBSOA and RBSOA curves, switching losses – minimum on and off state times, switching frequency capability – overcurrent protection of IGBT’S, short circuit protection, snubber requirements and snubber design.

UNIT - V

ADVANCED POWER SEMICONDUCTOR DEVICES: MOS gated thyristors, MOS controlled thyristors or MOS GTO’S, base resistance controlled thyristors, emitter switched thyristor, thermal design of power electronic equipment, modelling and simulation, heat transfer by conduction, transient thermal impedance, heat sinks, heat transfer by radiation and convection - heat sinkselection for power semiconductor devices.

TEXT BOOKS:

• 1. Ned Mohan, Tore M. Undeland, William P. Robbins, “Power Electronics Converters, Applications, and Design”, 3rd Edition. Wiley India Pvt Ltd, 2011.
• 2. G. Massobrio, P. Antognetti, “Semiconductor Device Modeling with Spice”, McGrawHill, 2nd Edition, 2010.

REFERENCES:

• 1. B. Jayant Baliga, “Power Semiconductor Devices”, 1st Edition, International Thompson Computer Press, 1995.
• 2. V. Benda, J. Gowar, and D. A. Grant, “Discrete and Integrated Power Semiconductor Devices: Theory and Applications”, John Wiley & Sons,1999. R19 M.TECH M. TECH. PE/PEED M. TECH – I YEAR – I SEM. (PE/PEED)