JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD

Course Objectives:

• 1. To understand Schottky Barrier Diode, IMPATT & TRAPATT diodes: Principles and applications as amplifiers and oscillators.
• 2. To understand PIN diodes working principle and its applications as Switches, limiters, phase shifters and modulators.
• 3. To analyse Avalanche Transit-Time Devices and its applications in microwave amplifiers and oscillators.
• 4. To understand operating characteristics of MISFETs , MESFETs GaAs FETs and BJTs and their applications.

Course Outcomes

After successfully completing the course students will be able to

• 1. Utilize Microwave solid state devices (Tunnel Diode, PIN Diode, Schottky Barrier Diode etc.)
• 2. Choose a suitable microwave solid state device for a particular application.
• 3. Recognize the importance of Microwave semiconductor devices in microwave amplifiers, oscillators, switches, limiters, phase shifters and modulators.

UNIT - I

Transient and ac behavior of p-n junctions, effect of doping profile on the capacitance of p-n junctions, noise in p-n junctions, high-frequency equivalent circuit. Varactor diode: Equivalent circuit, static and dynamic figures of merit, Manley Rowe power relation, Parametric amplifiers. Up converter, Degeneration amplifiers, Varactor multipliers. Charge storage capacitance.

UNIT - II

Tunnel diode: equivalent circuit, Tunnel diode stability, Tunnel diode amplifiers. Gunn devices: Volt amp. Characteristics, Small signal, Nonlinear, large signal theory, Modes of operation of Gunn diode, Gunn amplifiers-Gunn oscillators. Avalanche transit time MW diodes, Small signal theory, Large signal operation, Noise.

UNIT - III

PIN diodes: Description, the I-layer, Equivalent circuit behavior under reverse bias and forward bias, Diode impedance, Materials, Applications - Switches, limiters, phase shifters and modulators.

UNIT - IV

Schottky Barrier Diode: Physics of Schottky barriers, Design of and performance of Schottky barrier diode, applications. IMPATT & TRAPATT diodes: Principles and applications as amplifiers and oscillators.

UNIT - V

High frequency limitations of BJT, microwave bipolar transistors, heterojunction bipolar transistors, GaAs FETs, low noise and power GaAs FETs and their applications, DC biasing and impedance matching, Microwave transistor ‘S’ parameters, Operating characteristics of MISFETs and MESFETs, short-channel effects, high electron mobility transistor.

TEXT BOOKS:

• 1. S.Y. Liao-Microwave Devices and Circuits, 3rd, Prentice Hall.
• 2. Watson-Microwave Semiconductor Devices and their applications, McGraw Hill, 1969.

REFERENCE BOOKS:

• 1. Sze, S.M., and Ng, K.K.-Physics of Semiconductor Dev ices, 3rd Ed., wiley-Interscience, 2006.
• 2. Golio, M.-RF and Microwave Semiconductor devices Handbook- CRC Press (2002). M.TECH.- I YEAR- I SEMESTER MICROWAVE AND RADAR ENGINEERING