JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD

JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD B.Tech IV Year VLSI DESIGN Previous Question Paper (September - 2021 - R16)

B.Tech | IV Year | I Semester | R16 | September - 2021

Answer PaperPaper Code: 137JDMaximum Marks: 75Time: 3 Hours

Answer any Five Questions. All Questions Carry Equal Marks.

Main

1

Design CMOS Inverter Circuit and then explain its DC transfer characteristics with necessary equations.

15 marks

Answer

A CMOS inverter consists of a PMOS transistor connected in series with an NMOS transistor. The source of the PMOS is connected to the supply voltage (VDD), and the source of the NMOS is connected to ground (VSS). The gates of both transistors are tied together to form the input (Vin), and the drains are tied together to form the output (Vout).

The DC transfer characteristics are divided into five distinct regions based on the operating states of the transistors:

  1. Region 1 (Vin < VTN): The NMOS is in cutoff, and the PMOS is in linear region. Vout = VDD.
  2. Region 2 (VTN ≤ Vin < VM): The NMOS is in saturation, and the PMOS is in linear region. Vout begins to drop.
  3. Region 3 (Vin = VM): Both transistors are in saturation. This is the switching threshold where Vin = Vout. The threshold voltage VM is given by:
    VM = (VTN + sqrt(kp/kn)(VDD - |VTP|)) / (1 + sqrt(kp/kn))
  4. Region 4 (VM < Vin ≤ VDD - |VTP|): The NMOS is in linear region, and the PMOS is in saturation.
  5. Region 5 (Vin > VDD - |VTP|): The PMOS is in cutoff, and the NMOS is in linear region. Vout = 0.

The current equation for both transistors in saturation is:

ID = (k/2)(VGS - VT)2
where k = μCox(W/L). The transition is characterized by high gain at the switching threshold, making the CMOS inverter an ideal building block for digital logic circuits due to its high noise margin and low static power dissipation.

2

Derive the expressions of the following with respect to MOS transistor.

15 marks
a

gm

5 marks

Answer

The transconductance gm represents the change in drain current ID with respect to a change in gate-source voltage VGS. For an nMOS transistor in the saturation region, the drain current is given by:

ID = (μnCoxW / 2L) (VGS - VT)2

Differentiating ID with respect to VGS:

gm = ∂ID / ∂VGS = μnCox(W / L) (VGS - VT)

Alternatively, substituting the expression for ID, it can be expressed as:

gm = √(2μnCox(W / L)ID)
b

ω0

5 marks

Answer

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c

VT

5 marks

Answer

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3

With necessary illustrations explain the layout design rules and draw the layout diagram for 2- input CMOS AND gate. Also, illustrate its circuit diagram.

15 marks

Answer

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4

Explain in detail about the need of scaling, scaling principles and effect of scaling on MOSFET device parameters with examples.

15 marks

Answer

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515 marks
a

Derive the expression for time delay of a MOS device with cascaded inverters as drivers.

9 marks

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b

Define Fan-In and Fan-out and then explain their importance.

6 marks

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615 marks
a

Realize 4 × 1 multiplexer using CMOS transmission gates.

8 marks

Answer

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b

How to drive large capacitive loads? Elaborate.

7 marks

Answer

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715 marks
a

Examine the concept of Ripple carry adder and discuss its advantages and disadvantages.

7 marks

Answer

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b

Write short note on Barrel shifter.

8 marks

Answer

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8

Draw and explain the block diagrams of the following:

15 marks
a

CPLD

7 marks

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b

FPGA

8 marks

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About this paper

This page contains the question paper of VLSI DESIGN from JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD for B.Tech EIE IV Year I Semester, September - 2021, R16.

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