JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD
JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD B.Tech IV Year VLSI DESIGN Previous Question Paper (September - 2021 - R16)
Answer any Five Questions. All Questions Carry Equal Marks.
Main
Design CMOS Inverter Circuit and then explain its DC transfer characteristics with necessary equations.
Answer
A CMOS inverter consists of a PMOS transistor connected in series with an NMOS transistor. The source of the PMOS is connected to the supply voltage (VDD), and the source of the NMOS is connected to ground (VSS). The gates of both transistors are tied together to form the input (Vin), and the drains are tied together to form the output (Vout).
The DC transfer characteristics are divided into five distinct regions based on the operating states of the transistors:
- Region 1 (Vin < VTN): The NMOS is in cutoff, and the PMOS is in linear region. Vout = VDD.
- Region 2 (VTN ≤ Vin < VM): The NMOS is in saturation, and the PMOS is in linear region. Vout begins to drop.
- Region 3 (Vin = VM): Both transistors are in saturation. This is the switching threshold where Vin = Vout. The threshold voltage VM is given by:VM = (VTN + sqrt(kp/kn)(VDD - |VTP|)) / (1 + sqrt(kp/kn))
- Region 4 (VM < Vin ≤ VDD - |VTP|): The NMOS is in linear region, and the PMOS is in saturation.
- Region 5 (Vin > VDD - |VTP|): The PMOS is in cutoff, and the NMOS is in linear region. Vout = 0.
The current equation for both transistors in saturation is:
Derive the expressions of the following with respect to MOS transistor.
gm
Answer
The transconductance gm represents the change in drain current ID with respect to a change in gate-source voltage VGS. For an nMOS transistor in the saturation region, the drain current is given by:
Differentiating ID with respect to VGS:
Alternatively, substituting the expression for ID, it can be expressed as:
ω0
Answer
Sign in to view the complete answer paper.
VT
Answer
Sign in to view the complete answer paper.
With necessary illustrations explain the layout design rules and draw the layout diagram for 2- input CMOS AND gate. Also, illustrate its circuit diagram.
Answer
Sign in to view the complete answer paper.
Explain in detail about the need of scaling, scaling principles and effect of scaling on MOSFET device parameters with examples.
Answer
Sign in to view the complete answer paper.
Derive the expression for time delay of a MOS device with cascaded inverters as drivers.
Answer
Sign in to view the complete answer paper.
Define Fan-In and Fan-out and then explain their importance.
Answer
Sign in to view the complete answer paper.
Realize 4 × 1 multiplexer using CMOS transmission gates.
Answer
Sign in to view the complete answer paper.
How to drive large capacitive loads? Elaborate.
Answer
Sign in to view the complete answer paper.
Examine the concept of Ripple carry adder and discuss its advantages and disadvantages.
Answer
Sign in to view the complete answer paper.
Write short note on Barrel shifter.
Answer
Sign in to view the complete answer paper.
Draw and explain the block diagrams of the following:
CPLD
Answer
Sign in to view the complete answer paper.
FPGA
Answer
Sign in to view the complete answer paper.