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JNTU B.Tech III VLSI DESIGN Previous Question Paper (December - 2018 - R15)

B.Tech | III | II | R15 | December - 2018

Answer PaperPaper Code: 126VNMaximum Marks: 75Time: 3 hours

Note: This question paper contains two parts A and B. Part A is compulsory which carries 25 marks. Answer all questions in Part A. Part B consists of 5 Units. Answer any one full question from each unit. Each question carries 10 marks and may have a, b, c as sub questions.

PART - A

125 marks
a

Write about the Pass transistor.

2 marks

Answer

A pass transistor is a MOSFET used as a switch to pass a signal from its source to its drain. It is controlled by a gate voltage; when the gate voltage is high (for NMOS), the transistor conducts, allowing the signal to pass, and when low, it acts as an open circuit.

b

Distinguish between Enhancement and Depletion mode transistor action in N-MOS.

3 marks

Answer

An Enhancement mode transistor is normally off and requires a positive gate-to-source voltage (Vgs > Vt) to create a conducting channel. A Depletion mode transistor has a pre-implanted channel, making it normally on; it requires a negative gate-to-source voltage to turn off by depleting the channel of carriers.

c

Write about contacts and vias in layout design.

2 marks

Answer

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d

Write about the 1.2 μm double metal single poly CMOS rules.

3 marks

Answer

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e

Mention the different forms of Time delays in gate level circuits.

2 marks

Answer

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f

Explain about Switch logic and its usage.

3 marks

Answer

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g

Distinguish a synchronous and an asynchronous counters.

2 marks

Answer

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h

Write a note on Content Addressable Memory.

3 marks

Answer

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i

What is the need for testing of IC?

2 marks

Answer

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j

What are the different chip-level Test Techniques?

3 marks

Answer

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PART - B

210 marks
a

Explain the CMOS fabrication process in p-well using suitable diagrams.

5 marks

Answer

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b

Discuss the effect of threshold voltage on MOSFET current Equations.

5 marks

Answer

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OR
310 marks
a

Discuss the MOS transistor Characteristics in Depletion and enhancement modes.

5 marks

Answer

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b

Write about Alternative forms of pull-up and describe about the NMOS pull-ups.

5 marks

Answer

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4

Write about the stick diagrams and design a stick diagram for two input N-MOS NAND and NOR gates.

10 marks

Answer

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OR
510 marks
a

Distinguish between the Lambda-base rules and Double metal MOS process rules.

5 marks

Answer

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b

Draw the neat layout diagrams for NMOS shift register cell.

5 marks

Answer

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610 marks
a

Explain the formal estimation of CMOS inverter delay rise-time estimation and Fall-time estimation.

5 marks

Answer

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b

Write a note on the Wiring capacitance in detail.

5 marks

Answer

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OR
710 marks
a

Write about the different Alternate gate circuits in detail.

5 marks

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b

Discuss about the Choice of layers for the gate level design.

5 marks

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810 marks
a

Explain the working principle of Ripple carry adder using Transmission Gates.

5 marks

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b

Explain about the configurations and applications of SRAM and DRAM cells.

5 marks

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OR
910 marks
a

Explain the Principle and structure of Serial-Parallel multiplier.

5 marks

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b

Describe the design procedure for design of a asynchronous counter.

5 marks

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1010 marks
a

Design a PAL to realize a full Adder circuit.

5 marks

Answer

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b

Explain the detailed Architecture of CPLD and its Implementations.

5 marks

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OR
11

Write a short note on the following:

10 marks
a

CMOS Testing

5 marks

Answer

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b

Strategies for testing.

5 marks

Answer

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This page contains the question paper of VLSI DESIGN from JNTU for B.Tech ETM III II, December - 2018, R15.

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